features i o 8.0a vrrm 50v-1000v high surge current capability applications : from 005 to 10 xx marking polarity: color band denotes cathode k bu8xx 1 h igh diode semiconductor kbu plastic-encapsulate bridge rectifier general pu rp ose 1 phase bridge rectifier applications k bu + ~ ~ _ KBU8005 thru kbu810 item symbol unit conditions kbu8 005 01 02 04 06 08 10 repetitive peak reverse voltage v rrm v 50 100 200 400 600 800 1000 average rectified output current i o a 60h z sine wave, r- load tc=100 8 surge(non-repetitive)forward current i fsm a 60h z sine wave, 1 cycle, t a =25 200 current squared time i 2 t a 2 s 1ms t 8.3ms t j =25 ,rating of per diode 93 storage temperature t stg -55 ~+150 junction temperature t j -55 ~+150 electrical characteristics t a =25 unless otherwise specified item symbol unit test condition max peak forward voltage v fm v i fm =4a , pulse measu r ement , ratin g of p e r diode 1.0 peak reverse current i rrm a v rm =v rrm , pulse measurement, rating of per diode 10 thermal resistance r j-a /w between junction and ambient 9 (1) r j-c bet w een j unction and case 3.7 (2)
7 \ s l f d o & k d u d f w h u l v w l f v h l j k ' l r g h 6 h p l f r q g x f w r u the cruve graph is for reference only, can't be the basis for judgment fig.3-maximum non-retetitive peak forward surge current number of cycles at 60h z peak forward surge current amperes 250 200 0 100 10 1 150 100 50 10 0.1 0 20 40 60 80 100 120 140 1.0 fig.4-typical reverse characteristics percent of rated peak reverse instantanceous reverse current, micramperes t j =25 t j =100 fig.5-typical junction capacitance per element reverse voltage ,volts capacitance,(pf) 400 100 50 10 50 100 1 5 10 fig.1-derating curve for output rectified current average forward outputcurrent amperes case temperature, 50 100 0 150 1.0 5.0 4.0 3.0 2.0 6.0 8.0 7.0 heat sink mounting mounted on4*4 inch copper pc board.ta .51(1.27mm)lead length fig.2 typical instantaneous forward characteristic instantanceous forward current, amperes instantaneous forward voltage volts 100 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 40 20 10 4.0 1.0 0.4 0.2 1.3 t j =25 pulse width=300s 1%duty cycle
3 h igh diode semiconductor k bu dimensions in inches and (milimeters) .935(23.7) .895(22.7) .600(16.8) .700(17.8) 300 (7.5) .780(19.8) .740(18.8) (25.4) 1.00 min. .052(1.3)dia. .048(1.2)typ. .071(1.8) .087(2.2) .220(5.6) .180(4.6) .256(6.5) .276(7.0) .15 x23l (3.8 x5.7l) hole thru .165(4.2)*45
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